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Semiconductor Components Industries, LLC, 2009
January, 2009 ?
Rev. 0
1
Publication Order Number:
NSD16F3/D
NSD16F3T5G
Switching Diode
The NSD16F3T5G device is a spin?off of our popular SOT?23
three?leaded device. It is designed for switching applications and is
housed in the SOT?1123 surface mount package. This device is ideal
for low?power surface mount applications where board space is at a
premium.
Features
?
Reduces Board Space
?
This is a Halide?Free Device
?
This is a Pb?Free Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
75
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, TA
= 25
°C
Derate above 25°C
PD
(Note 1)
290
2.3
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient
RJA
(Note 1)
432
°C/W
Total Device Dissipation, TA
= 25
°C
Derate above 25°C
PD
(Note 2)
347
2.8
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient
RJA
(Note 2)
360
°C/W
Thermal Resistance,
Junction?to?Lead 3
RJL
(Note 2)
143
°C/W
Junction and Storage Temperature Range
TJ, Tstg
?55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2
1 oz, copper traces.
2
1 oz, copper traces.
2. 500 mm
SOT?1123
CASE 524AA
STYLE 2
11
2
NSD16F3T5G
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping?
NSD16F3T5G SOT?1123
(Pb?Free)
8000/Tape & Reel
T = Device Code
M = Date Code
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
T M
1
ANODE
3
CATHODE
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